Nucleation on top of islands in epitaxial growth

Abstract

We develop a theory for nucleation on top of islands in epitaxial growth based on the derivation of lifetimes and rates governing individual microscopic processes. These processes are strongly affected by the additional step edge barrier E_S for descending atoms. If the dissociation times of unstable clusters can be neglected, the theory predicts that for small critical nuclei of size i<=2 the nucleation is governed by fluctuations, during which by chance i+1 atoms are present on the island. For large critical nuclei i>=3 by contrast, the nucleation process can be described in a mean-field type manner, which for large E_S corresponds to the approach developed by Tersoff et al. [Phys. Rev. Lett. 72, 266 (1994)]. In both the fluctuation-dominated and the mean-field case, various scaling regimes are identified, where the typical island size at the onset of nucleation shows a power law in dependence on the adatom diffusion rates, the incoming atom flux, and the step edge crossing probability exp(-E_S/k_B T). For the case where the dissociation rates of metastable clusters enter the problem as additional parameters, we set up a semi-analytical approach based on novel rate equations, which can easily be solved numerically. The results obtained from the theory are in good agreement with Monte Carlo data. Implications for various applications are pointed out.

24 pages, 10 figures

References in corpus (4)

• Growth of nanostructures by cluster deposition : a review
• Instabilities in crystal growth by atomic or molecular beams
• Island nucleation in the presence of step edge barriers: Theory and applications
• Island Distance in One-Dimensional Epitaxial Growth

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