Performance of a Low Noise Front-end ASIC for Si/CdTe Detectors in Compton Gamma-ray Telescope

Abstract

Compton telescopes based on semiconductor technologies are being developed to explore the gamma-ray universe in an energy band 0.1--20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of such Compton telescopes is the high energy resolution that is crucial for high angular resolution and high background rejection capability. The energy resolution around 1 keV is required to approach physical limit of the angular resolution due to Doppler broadening. We have developed a low noise front-end ASIC (Application-Specific Integrated Circuit), VA32TA, to realize this goal for the readout of Double-sided Silicon Strip Detector (DSSD) and Cadmium Telluride (CdTe) pixel detector which are essential elements of the semiconductor Compton telescope. We report on the design and test results of the VA32TA. We have reached an energy resolution of 1.3 keV (FWHM) for 60 keV and 122 keV at 0 degree C with a DSSD and 1.7 keV (FWHM) with a CdTe detector.

6 pages, 7 figures, IEEE style file, to appear in IEEE Trans. Nucl. Sci

References in corpus (3)

• The MEGA Advanced Compton Telescope Project
• Gamma-ray Polarimetry
• Advanced Compton Telescope Designs and SN Science

Cited by in corpus (8)

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• A Prototype Si/CdTe Compton Camera and the Polarization Measurement
• Fine-pitch semiconductor detector for the FOXSI mission
• Single event effect characterization of the mixed-signal ASIC developed for CCD camera in space use
• Design and Performance of the Soft Gamma-ray Detector for the NeXT mission
• Development of the analog ASIC for multi-channel readout X-ray CCD camera
• In-orbit performance and calibration of the Hard X-ray Imager onboard Hitomi (ASTRO-H)