Recent Progress in CdTe and CdZnTe Detectors

Abstract

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ~ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises due to the low mobility and short lifetime of holes. Recently, significant improvements have been achieved to improve the spectral properties based on the advances in the production of crystals and in the design of electrodes. In this overview talk, we summarize (1) advantages and disadvantages of CdTe and CdZnTe semiconductor detectors and (2) technique for improving energy resolution and photopeak efficiencies. Applications of these imaging detectors in future hard X-ray and Gamma-ray astronomy missions are briefly discussed.

9 pages, 15 figures, Based on the invited overview talk at 2000 IEEE Nuclear Science Symposium (Lyon, France). will appear in IEEE NS

Cited by in corpus (27)

• High energy resolution hard X-ray and gamma-ray imagers using CdTe diode devices
• Single Photon Counting X-ray Imaging with Si and CdTe Single Chip Pixel Detectors and Multichip Pixel Modules
• The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)
• Soft Gamma-ray Detector for the ASTRO-H Mission
• Wide band X-ray Imager (WXI) and Soft Gamma-ray Detector (SGD) for the NeXT Mission
• A Prototype Si/CdTe Compton Camera and the Polarization Measurement
• Reducing beam hardening effects and metal artefacts using Medipix3RX: With applications from biomaterial science
• Molecular Dynamics Studies of Dislocations in CdTe Crystals from a New Bond Order Potential
• Development of Uniform CdTe Pixel Detectors Based on Caltech ASIC
• Near room temperature X-ray and Gamma ray spectroscopic detectors for future space experiments
• High-fidelity simulations of CdTe vapor deposition from a new bond-order potential-based molecular dynamics method
• Photo-Hall effect spectroscopy with enhanced illumination in p-Cd1-xMnxTe showing negative differential photoconductivity
• Front-end ASIC for Spectroscopic Readout of Virtual Frisch-Grid CZT Bar Sensors
• 2-mm-Thick Large-Area CdTe Double-sided Strip Detectors for High-Resolution Spectroscopic Imaging of X-ray and Gamma-ray with Depth-Of-Interaction Sensing
• Imaging and spectral performance of CdTe double-sided strip detectors for the Hard X-ray Imager onboard ASTRO-H
• Fine-pitch CdTe detector for hard X-ray imaging and spectroscopy of the Sun with the FOXSI rocket experiment
• Study of the Polarimetric Performance of a Si/CdTe Semiconductor Compton Camera for the Hitomi Satellite
• In-orbit performance and calibration of the Hard X-ray Imager onboard Hitomi (ASTRO-H)
• Dual-wavelength Photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity
• Imaging and Spectral Performance of a 60 μm Pitch CdTe Double-Sided Strip Detector
• Development of a Low-noise Front-end ASIC for CdTe Detectors
• Wide-gap CdTe Strip Detectors for High-Resolution Imaging in Hard X-rays
• Results of a Si/CdTe Compton Telescope
• Imaging and Spectral Performance of a Wide-gap CdTe Double-Sided Strip Detector
• Single Photon X-Ray Imaging with Si- and CdTe-Sensors
• A diffraction effect in X-ray area detectors
• Optimization of <= 200 um pitch CZT detectors for future high-resolution X-ray instrumentation in astrophysics