The self-organized vacancy order in PrGe
arXiv:2607.12781 · doi:10.1103/1jfr-6fkb
Abstract
In this work, we report the discovery of a new crystal structure on the Ge-rich side of the Pr-Ge binary phase diagram. Using a high-temperature flux technique, we grew single crystals of , which adopt a previously unreported orthorhombic 2 structure type featuring ordered Ge vacancies. We present the anisotropic magnetic properties and identify the crystallographic axis perpendicular to the crystal plane as the magnetic easy axis. Temperature-dependent resistivity measurements reveal metallic behavior with a distinct anomaly at = 14.3 K. Hall resistivity data indicate that electron-like carriers dominate, with a carrier concentration on the order of . The magnetic order is readily suppressed by a magnetic field of approximately 0.4 T applied along the easy axis.
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