Wafer-scale Demonstration of High-voltage beta-Ga2O3 MOSFETs with Excellent Uniformity and over 3kV Breakdown Voltages

Abstract

This study demonstrates a wafer-scale growth of a 2-inch Si-doped ${\hat{I}}^2$-Ga2O3 (100) epitaxial wafer and the realization of uniform, high-voltage lateral ${\hat{I}}^2$-Ga2O3 MOSFET arrays. The 2-inch homoepitaxial ${\hat{I}}^2$-Ga2O3 (100) film grown by MOCVD exhibit excellent crystalline uniformity with an average rocking curve FWHM of ~27.0 arcsec and a low surface roughness less than 1 nm, alongside a uniform net doping concentration on the value of 4.60 $\times$ 1E17 cm-3. The fabricated MOSFETs deliver a threshold voltage of -31.75 V, a drain-current on/off ratio over 1E9, a specific on-resistance of 126.52 mohm$\cdot$cm2 and breakdown voltage exceeding 3 kV. Statistical analysis across the entire wafer presents good device uniformity, with threshold voltages ranging from -28 V to -36 V, output current densities of 60-75 mA/mm, and a breakdown voltage over 3 kV. These results provide the demonstration using the 2-inch ${\hat{I}}^2$-Ga2O3 epitaxial wafer to realize high-voltage ${\hat{I}}^2$-Ga2O3 MOSFETs with wafer-scale performance uniformity for next-generation power device application.

10 pages, 4 figures