Room-temperature, continuous wave lasing in planar microcavities with quantum dots

Abstract

High-quality planar cavities with low-absorption mirrors based on $A{l}_{0.2}G{a}_{0.8}As/A{l}_{0.9}G{a}_{0.1}As$ layers demonstrate continuous wave lasing at a wavelength of 956 nm. At 300 K, the threshold power density and quality-factor at the threshold are (4.2$\pm$0.3) $kW/c{m}^2$ and (6800$\pm$220). Increasing the pump level above two thresholds lead to an enlargement in the quality-factor to at least 19000. Efficient lateral heat dissipation in the planar semiconductor microcavity is confirmed by a low mode-energy shift of approximately 400 $\mu$eV at two lasing thresholds.

7 pages, 4 figures

References in corpus (9)

• Quantum dots for photonic quantum information technology
• Developing of a photonic hardware platform for brain-inspired computing based on $5\times 5$ VCSEL arrays
• Experimental reservoir computing with diffractively coupled VCSELs
• Low-threshold lasing of optically pumped micropillar lasers with Al${}_{0.2}$Ga${}_{0.8}$As/Al${}_{0.9}$Ga${}_{0.1}$As distributed Bragg reflectors
• Optical pumping of quantum dot micropillar lasers
• Injection locking and coupling the emitters of large VCSEL arrays via diffraction in an external cavity
• Lasing of Quantum-Dot Micropillar Lasers under Elevated Temperatures
• Low-Threshold Surface-Emitting Whispering-Gallery Mode Microlasers
• Advanced micropillar cavities: room-temperature operation of microlasers