Correlation-driven origin of shallow electron pocket in CoTaS revealed by ARPES and cluster perturbation theory
arXiv:2602.15588 · doi:10.1103/6y9w-lx94
Abstract
We investigate the electronic structure and Fermi surface of CoTaS using angle-resolved photoemission spectroscopy (ARPES) combined with theoretical modeling beyond standard density functional theory (DFT+U). A shallow electron pocket, the so-called feature, is observed at the Fermi level near the corner of the superlattice Brillouin zone, representing the first experimental observation of this feature in an intercalated TaS compound. Similar pockets have been reported in NbS ( = Co, Cr, Ni), where their surface versus bulk origin remains actively debated. Because conventional DFT+U does not capture this feature, we employ cluster perturbation theory (CPT) to incorporate an explicit treatment of strong electron correlations () on the Co sites. CPT successfully reproduces the feature, demonstrating its origin from correlation-driven bulk states rather than surface effects. To further substantiate this conclusion, we studied a reduced Co-content sample, CoTaS, where the reduced charge transfer modifies the Co-derived states near the Fermi level. Its electronic structure remains largely similar to that of pristine 2H-TaS, showing only a minor overall energy shift and lacking the feature, consistent with disrupted long-range Co ordering and modified orbital character near the Fermi level. We demonstrate that the feature arises from strong local correlations on the Co sites and requires long-range crystallographic order among intercalated Co atoms to maintain coherence. These results highlight the importance of strong electronic correlations in magnetically intercalated transition-metal dichalcogenides and provide a microscopic understanding of features not captured by conventional DFT+U.
11 pages, 6 figures, 1 table
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