Ferroelectric Control of Interlayer Excitons in 3R-MoS / MoSe Heterostructures
arXiv:2508.08911 · doi:10.1021/acs.nanolett.5c04932
Abstract
We investigate the interaction between interlayer excitons and ferroelectric domains in hBN-encapsulated 3R-MoS/MoSe heterostructures, combining photoluminescence experiments with density functional theory and many-body Green's function calculations. Low-temperature photoluminescence spectroscopy reveals a strong redshift of the interlayer exciton energy with increasing MoS layer thickness, attributed to band renormalization and dielectric effects. We observe local variations in exciton energy that correlate with local ferroelectric domain polarization of the 3R-MoS layer, showcasing distinct domain-dependent interlayer exciton transition energies. Gate voltage experiments demonstrate that the interlayer exciton energy can be tuned by electrically induced domain switching. These results highlight the potential for interlayer exciton control by local ferroelectric order and establish a foundation for future ferroelectric optoelectronic devices based on van der Waals heterostructures.
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