Observation of resistive switching and diode effect in the conductivity of TiTe2 point contacts

Abstract

We measured the I(V) and dV/dI(V) characteristics of TiTe2-based point contacts (PCs) from room to helium temperatures. Features indicating the emergence of a charge density wave (CDW) were detected. They represent symmetrical relatively V=0 maxima in dV/dI(V) around 150 mV at liquid helium temperatures, which disappear above 150 K, similar to the case of sister CDW compound TiSe2. Applying higher voltages above 200 mV, we observed resistive switching in TiTe2 PCs from a metallic-like low-resistance state to non-metallic type high-resistance state with a change of resistance by an order of magnitude. A unique diode-like effect was registered in "soft" TiTe2 PCs with hysteretic I(V) at negative voltage on TiTe2. Discovering the resistive switching and diode effect adds TiTe2 to the transition-metal dichalcogenides, which could be useful in developing non-volatile ReRAM and other upcoming nanotechnologies.

e.g.: 9 pages, 5 figures, accepted to "Low Temperature Physics" journal

References in corpus (3)

• Switchable domains in point contacts based on transition metal tellurides
• Peculiarities of electron transport and resistive switching in point contacts on TiSe2, TiSeS and CuxTiSe2
• Electron-phonon interaction, magnetic phase transition, charge density waves and resistive switching in VS2 and VSe2 revealed by Yanson point contact spectroscopy