Switchable domains in point contacts based on transition metal tellurides

Abstract

We report resistive switching in voltage biased point contacts (PCs) based on series of van der Waals transition metals tellurides (TMTs) such as MeTe2 (Me=Mo, W) and TaMeTe4 (Me= Ru, Rh, Ir). The switching occurs between a low resistive "metallic-type" state, which is the ground state, and a high resistive "semiconducting-type" state by applying certain bias voltage (<1V), while reverse switching takes place by applying voltage of opposite polarity. The origin of the effect can be formation of domain in PC core by applying a bias voltage, when a strong electric field (about 10kV/cm) modifies the crystal structure and controls its polarization. In addition to the discovery of the switching effect in PCs, we also suggest a simple method of material testing before functionalizing them, which offers a great advantage in finding suitable novel substances. The new functionality of studied TMTs arising from switchable domains in submicron hetero-structures that are promising, e.g., for non-volatile resistive random access memory (RRAM) engineering.

arXiv comment8 pages, 4 figs., supplement with 8 figs. V2 some text revision

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Cited by in corpus (4)

• Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family
• Peculiarities of electron transport and resistive switching in point contacts on TiSe2, TiSeS and CuxTiSe2
• Observation of resistive switching and diode effect in the conductivity of TiTe2 point contacts
• Electron-phonon interaction, magnetic phase transition, charge density waves and resistive switching in VS2 and VSe2 revealed by Yanson point contact spectroscopy