Optimizing Binary and Ternary Neural Network Inference on RRAM Crossbars using CIM-Explorer
arXiv:2505.14303
The paper presents CIM-Explorer, a modular toolkit that compiles, maps, and simulates binary and ternary neural network inference on RRAM crossbars, enabling design‑space exploration of accuracy across different hardware parameters.
Abstract
Using Resistive Random Access Memory (RRAM) crossbars in Computing-in-Memory (CIM) architectures offers a promising solution to overcome the von Neumann bottleneck. Due to non-idealities like cell variability, RRAM crossbars are often operated in binary mode, utilizing only two states: Low Resistive State (LRS) and High Resistive State (HRS). Binary Neural Networks (BNNs) and Ternary Neural Networks (TNNs) are well-suited for this hardware due to their efficient mapping. Existing software projects for RRAM-based CIM typically focus on only one aspect: compilation, simulation, or Design Space Exploration (DSE). Moreover, they often rely on classical 8 bit quantization. To address these limitations, we introduce CIM-Explorer, a modular toolkit for optimizing BNN and TNN inference on RRAM crossbars. CIM-Explorer includes an end-to-end compiler stack, multiple mapping options, and simulators, enabling a DSE flow for accuracy estimation across different crossbar parameters and mappings. CIM-Explorer can accompany the entire design process, from early accuracy estimation for specific crossbar parameters, to selecting an appropriate mapping, and compiling BNNs and TNNs for a finalized crossbar chip. In DSE case studies, we demonstrate the expected accuracy for various mappings and crossbar parameters. CIM-Explorer can be found on GitHub.