THz carrier dynamics in $SrTi{O}_3/LaTi{O}_3$ interface two-dimensional electron gases

Abstract

A two-dimensional electron gas (2DEG) forms at the interface of complex oxides like $SrTi{O}_3$ (STO) and $LaTi{O}_3$ (LTO), despite each material having a low native conductivity, as a band and a Mott insulator, respectively. The interface 2DEG hosts charge carriers with moderate charge carrier density and mobility that raised interest as a material system for applications like field-effect transistors or detectors. Of particular interest is the integration of these oxide systems in silicon technology. To this end we study the carrier dynamics in a STO/LTO/STO heterostructure epitaxially grown on Si(001) both experimentally and theoretically. Linear THz spectroscopy was performed to analyze the temperature dependent charge carrier density and mobility, which was found to be in the range of $10^{12}$ $c{m}^2$ and 1000 $c{m}^2{V}^{-1}{s}^{-1}$, respectively. Pump-probe measurements revealed a very minor optical nonlinearity caused by hot carriers with a relaxation time of several 10 ps, even at low temperature. Density functional theory calculations with a Hubbard U term on ultrathin STO-capped LTO films on STO(001) show an effective mass of 0.64-0.68 $m_e$.

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