Nanoscale rectification at the LaAlO3/SrTiO3 interface

Abstract

Nanoscale control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to new families of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical rectification in the nanowire, analogous to what occurs naturally for Schottky diodes or by design in structures with engineered structural inversion asymmetry. Nanostructures produced in this manner may be useful for electro-optic applications or in spintronic devices.

References in corpus (5)

• Magnetic effects at the interface between nonmagnetic oxides
• Electric Field Control of the LaAlO${}_3$/SrTiO${}_3$ Interface Ground State
• Tunable Rashba spin-orbit interaction at oxide interfaces
• Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates
• Out-of-plane spin polarization from in-plane electric and magnetic fields

Cited by in corpus (10)

• Physics of SrTiO${}_3$-based heterostructures and nanostructures: a review
• "Water-cycle" mechanism for writing and erasing nanostructures at the LaAlO3/SrTiO3 interface
• Rewritable nanoscale oxide photodetector
• Nanoscale Phenomena in Oxide Heterostructures
• Tunable electron-electron interactions in LaAlO3/SrTiO3 nanostructures
• Tuning Pairing Amplitude and Spin-Triplet Texture by Curving Superconducting Nanostructures
• Anomalous Transport in Sketched Nanostructures at the LaAlO3/SrTiO3 Interface
• Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor
• Nitride Multilayers as a Platform for Parallel Two-Dimensional Electron-Hole Gases: MgO/ScN(111)
• THz carrier dynamics in $SrTi{O}_3/LaTi{O}_3$ interface two-dimensional electron gases