Hidden States and Dynamics of Fractional Fillings in tMoTe2 Moiré Superlattices
arXiv:2502.21153 · doi:10.1038/s41586-025-08954-8
Abstract
The fractional quantum anomalous Hall (FQAH) effect was recently discovered in twisted MoTe2 bilayers (tMoTe2). Experiments to date have revealed Chern insulators from hole doping at v = -1, -2/3, -3/5, and -4/7 (per moiré unit cell). In parallel, theories predict that, between v = -1 and -3, there exist exotic quantum phases, such as the coveted fractional topological insulators (FTI), fractional quantum spin Hall (FQSH) states, and non-abelian fractional states. Here we employ transient optical spectroscopy on tMoTe2 to reveal nearly 20 hidden states at fractional fillings that are absent in static optical sensing or transport measurements. A pump pulse selectively excites charge across the correlated or pseudo gaps, leading to the disordering (melting) of correlated states. A probe pulse detects the subsequent melting and recovery dynamics via exciton and trion sensing. Besides the known states, we observe additional fractional fillings between v = 0 and -1 and a large number of states on the electron doping side (v > 0). Most importantly, we observe new states at fractional fillings of the Chern bands at v = -4/3, -3/2, -5/3, -7/3, -5/2, and -8/3. These states are potential candidates for the predicted exotic topological phases. Moreover, we show that melting of correlated states occurs on two distinct time scales, 2-4 ps and 180-270 ps, attributed to electronic and phonon mechanisms, respectively. We discuss the differing dynamics of the electron and hole doped states from the distinct moiré conduction and valence bands.
19 pages, 4 figures, 13 extended figures
References in corpus (23)
- Signatures of Fractional Quantum Anomalous Hall States in Twisted MoTe2 Bilayer
- Observation of Fractionally Quantized Anomalous Hall Effect
- Integer and fractional Chern insulators in twisted bilayer MoTe2
- Valley-spin polarized Landau levels in a monolayer semiconductor
- Fractional Chern Insulator in Twisted Bilayer MoTe
- Programming Correlated Magnetic States via Gate Controlled Moiré Geometry
- Tunable bilayer Hubbard model physics in twisted WSe2
- Polarization-driven band topology evolution in twisted MoTe and WSe
- Local probe of bulk and edge states in a fractional Chern insulator
- Terahertz phonon engineering with van der Waals heterostructures
- Multifaceted moiré superlattice physics in twisted WSe bilayers
- Non-Abelian fractionalization in topological minibands
- Band mixing in the quantum anomalous Hall regime of twisted semiconductor bilayers
- Interplay between topology and correlations in the second moiré band of twisted bilayer MoTe2
- Non-Abelian Fractional Quantum Anomalous Hall States and First Landau Level Physics in Second Moiré Band of Twisted Bilayer MoTe2
- Multiple Chern bands in twisted MoTe and possible non-Abelian states
- Higher Landau-Level Analogs and Signatures of Non-Abelian States in Twisted Bilayer MoTe
- Halperin States of Particles and Holes in Ideal Time Reversal Invariant Pairs of Chern Bands and The Fractional Quantum Spin Hall Effect in Moiré MoTe
- Two-Dimensional Moiré Polaronic Electron Crystals
- Coherent Modulation of Two-Dimensional Moiré States with On-Chip THz Waves
- Time-Domain Signatures of Distinct Correlated Insulators in a Moiré Superlattice
- Wigner Molecular Crystals from Multi-electron Moiré Artificial Atoms
- When Could Abelian Fractional Topological Insulators Exist in Twisted MoTe (and Other Systems)
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- Characterization of fractional Chern insulator quasiparticles in twisted homobilayer MoTe
- Twistronics and moiré superlattice physics in 2D transition metal dichalcogenides
- Candidate for a Fractional Topological Insulator in Twisted MoTe2
- Kekulé order from diffuse nesting near higher-order Van Hove points
- Propagating Collective Spin-valley Modes in Twisted WSe2
- Dual-Polarization SHG Interferometry for Imaging Antiparallel Domains and Stacking Angles of 2D Heterocrystals
- Engineering topological exciton structures in two-dimensional semiconductors by a periodic electrostatic potential
- Intervalley Band Crossing and Transition of Fractional Chern Insulators in Floquet Twisted Bilayer MoTe
- Topological Order Without Band Topology in Moiré Graphene