Winding Berry dipole on uniaxially strained graphene/hBN/hBN moiré trilayers

Abstract

Nonlinear Hall-like currents can be generated by a time-periodic alternating bias on two-dimensional (2D) materials lacking inversion symmetry. To hint that the moiré between graphene and its supporting substrate contributes to the homogeneity of nonlinear currents, the change in the local potential $\Delta V(r)$ around horizontally strained graphene due to a homobilayer of hexagonal boron nitride (hBN) was obtained from ab initio calculations, and corrections to on-site energies and hopping matrix elements on graphene's tight-binding electronic dispersion of $\pi -$electrons were calculated. Relying on a semiclassical approximation, Berry dipoles $D$ are seen to change orientation and wind throughout the moiré lattice.

Accepted at PRB on December 13, 2024

References in corpus (10)

• The electronic properties of graphene
• Nonlinear Hall Effects
• Berry curvature dipole senses topological transition in a moiré superlattice
• Berry Curvature Dipole in Strained Graphene: a Fermi Surface Warping Effect
• Moiré band model and band gaps of graphene on hexagonal boron nitride
• Polar meron-antimeron networks in strained and twisted bilayers
• Giant nonlinear Hall effect in strained twisted bilayer graphene
• Observation of stacking engineered magnetic phase transitions within moiré supercells of twisted van der Waals magnets
• Valley protected one-dimensional states in small-angle twisted bilayer graphene
• Ferroelectric valley valves with graphene/MoTe${}_2$ van der Waals heterostructures

Cited by in corpus (1)

• Engineering Floquet moiré patterns for scalable photocurrents