Impact of extreme ultraviolet radiation on the scintillation of pure and xenon-doped liquid argon

Abstract

The Xenon-Argon Technology (X-ArT) collaboration presents a study on the dynamics of pure and xenon-doped liquid argon (LAr) scintillation. Using two types of silicon photomultipliers sensitive to different wavelength ranges, we provide evidence in favor of a contribution from long-lived (>10 $\mu$s) extreme ultraviolet (EUV) lines emitted from argon atomic states, which enhances the light yield. This component is present in both pure and xenon-doped LAr, becoming more pronounced at higher xenon concentrations, where it complements the traditional collisional energy transfer process. To explain this mechanism, we develop a comprehensive model of the Xe-doped LAr scintillation process that integrates both collisional and radiative contributions. Additionally, we investigate how xenon doping affects LAr scintillation light yield and pulse shape discrimination. Finally, we hypothesize that the EUV component may explain the emission of spurious electrons, a known challenge in light dark matter searches using noble liquids. By characterizing the scintillation dynamics in Xe-doped LAr, identifying the long-lived EUV component, and exploring the potential origin of spurious electrons, this work lays the groundwork for optimizing detector performance and advancing the design and sensitivity of future noble liquid particle detectors.

12 pages, 11 figures

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