Gatemonium: A Voltage-Tunable Fluxonium

Abstract

We present a new style of fluxonium qubit, gatemonium, based on an all superconductorsemiconductor hybrid platform. The linear inductance is achieved using six hundred planar Al-InAs Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One and two-tone spectroscopy of the gatemonium transitions further reveal details of the hybrid plasmon-fluxon spectrum. Accounting for the nonsinusoidal current-phase relation of the single junction, we fit the measured spectra to extract charging and inductive energies. We conduct time domain characterization of the plasmon modes in a second gatemonium device with different charging energy and JJ array inductance. We discuss future directions for this platform in gate voltage-tunable, high plasma frequency, enhanced impedance junction arrays, and enhanced coherence times for voltage tunable architectures.

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Cited by in corpus (7)

• A Review of Design Concerns in Superconducting Quantum Circuits
• The carbon nanotube gatemon qubit
• Strongly anharmonic flux-tunable transmon based on InAs-Al 2D heterostructure
• Kicked fluxonium with quantum strange attractor
• Hybrid superinductance with Al/InAs
• Directional conductance of Andreev crystals in hybrid Josephson junction arrays
• Determination of the current-phase relation of an InAs 2DEG Josephson junction with a microwave resonator