Ultra-high endurance silicon photonic memory using vanadium dioxide

Abstract

Silicon photonics arises as a viable solution to address the stringent resource demands of emergent technologies, such as neural networks. Within this framework, photonic memories are fundamental building blocks of photonic integrated circuits that have not yet found a standardized solution due to several trade-off among different metrics such as energy consumption, speed, footprint, or fabrication complexity, to name a few. In particular, a photonic memory exhibiting ultra-high endurance performance (> 10^6 cycles) has been elusive to date. Here, we report an ultra-high endurance silicon photonic memory using vanadium dioxide (VO_2) exhibiting a record cyclability of up to 10^7 cycles without degradation. Moreover, our memory features an ultra-compact footprint below 5 μm with potential for nanosecond and picojoule programming performance. Our silicon photonic memory could find application in emerging photonic applications demanding high number of memory updates such as photonic neural networks with in-situ training.

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Cited by in corpus (1)

• Sub-milliwatt threshold power and tunable-bias all-optical nonlinear activation function using vanadium dioxide for wavelength-division multiplexing photonic neural networks