Superconductivity in Ternary Germanide ScPdGe and Silicide ScPdSi
arXiv:2312.06045 · doi:10.7566/JPSJ.93.023701
Abstract
The electronic properties of ScPdGe and ScPdSi, crystallizing in the hexagonal ZrNiAl and orthorhombic TiNiSi structures, respectively, are investigated. ScPdGe and ScPdSi are found to show bulk superconductivity below 0.9 and 1.7 K, respectively, based on electrical resistivity and heat capacity data measured using synthesized polycrystalline samples. First principles calculations indicate the presence of large contributions of Sc 3d and Pd 4d electrons at the Fermi energy in both materials. The electronic properties and electronic states of these materials are discussed in comparison with those of several superconductors containing scandium and a 4d transition metal element.
arXiv comment5 pages, 4 figures, accepted for publication in J. Phys. Soc. Jpn
References in corpus (6)
- Superconductivity in metal rich Li-Pd-B ternary Boride
- First-principles study of superconducting ScRhP and ScIrP pnictides
- Superconductivity in the Hexagonal Ternary Phosphide ScIrP
- Synthesis and Superconducting Properties of a Hexagonal Phosphide ScRhP
- Superconductivity in Ternary Scandium Telluride Sc6MTe2 with 3d, 4d, and 5d Transition Metals
- Superconductivity at 3.1 K in the orthorhombic ternary silicide ScRuSi