Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and ${}^{90}\mathrm{Sr}$

Abstract

Results in this paper present an in-depth study of time resolution for active pixels of the RD50-MPW2 prototype CMOS particle detector. Measurement techniques employed include Backside- and Edge-TCT configurations, in addition to electrons from a ${}^{90}\mathrm{Sr}$ source. A sample irradiated to $5\cdot 10^{14}{\mathrm{n}}_{\mathrm{eq}}/{\mathrm{cm}}^2$ was used to study the effect of radiation damage. Timing performance was evaluated for the entire pixel matrix and with positional sensitivity within individual pixels as a function of the deposited charge. Time resolution obtained with TCT is seen to be uniform throughout the pixel's central region with approx. $220\mathrm{ps}$ at $12{\mathrm{ke}}^{-}$ of deposited charge, degrading at the edges and lower values of deposited charge. ${}^{90}\mathrm{Sr}$ measurements show a slightly worse time resolution as a result of delayed events coming from the peripheral areas of the pixel.

References in corpus (4)

• Timing performance of small cell 3D silicon detectors
• Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
• Characterisation of analogue front end and time walk in CMOS active pixel sensor
• Study of neutron irradiation effects in Depleted CMOS detector structures