9 citations · 31 across the 7 of their papers we have counts for
7 papers
Enhancing Radiation Hardness and Granularity in HV-CMOS: The RD50-MPW4 Sensor
B. Pilsl, T. Bergauer, R. Casanova +15
The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the \mpw, demonstrates competitive radiation tolerance, spatial granularity, and timing resol…
Characterization of the RD50-MPW4 HV-CMOS pixel sensor
B. Pilsl, T. Bergauer, R. Casanova +14
The RD50-MPW4 is the latest HV-CMOS pixel sensor from the CERN-RD50-CMOS working group, designed to evaluate the HV-CMOS technology in terms of spatial resolution, radiation hardne…
Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and
J. Debevc, M. Franks, B. Hiti +11
Results in this paper present an in-depth study of time resolution for active pixels of the RD50-MPW2 prototype CMOS particle detector. Measurement techniques employed include Back…
Design and test results of different aluminum coating layers on the sCMOS sensors for soft X-ray detection
W. X. Wang, Z. X. Ling, C. Zhang +2
In recent years, tremendous progress has been made on complementary metal-oxide-semiconductor (CMOS) sensors for applications as X-ray detectors. To shield the visible light in X-r…
RD50-MPW3: A fully monolithic digital CMOS sensor for future tracking detectors
Patrick Sieberer, Chenfan Zhang, Thomas Bergauer +6
The CERN-RD50 CMOS working group develops the RD50-MPWseries of monolithic high-voltage CMOS pixel sensors for potential use in future high luminosity experiments such as the HL-LH…
Study of neutron irradiation effects in Depleted CMOS detector structures
I. Mandić, V. Cindro, J. Debevc +12
In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivitie…
Characterisation of analogue front end and time walk in CMOS active pixel sensor
B. Hiti, V. Cindro, A. Gorišek +10
In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investiga…