Micro-transfer-printed Thin film lithium niobate (TFLN)-on-Silicon Ring Modulator
arXiv:2311.15387 · doi:10.1021/acsphotonics.3c01869
Abstract
Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lithium niobate brings TFLN to well-established silicon ecosystem by easy "pick and place", which showcases immense potential in constructing high-density, cost-effective, highly versatile heterogeneous integrated circuits. Here, we demonstrated for the first time a micro-transfer-printed thin film lithium niobate (TFLN)-on-silicon ring modulator, which is an important step towards dense integration of performant lithium niobate modulators with compact and scalable silicon circuity. The presented device exhibits an insertion loss of -1.5dB, extinction ratio of -37dB, electro-optical bandwidth of 16GHz and modulation rates up to 45Gps.
8 figures,10 pages. ACS Photonics 2024
References in corpus (5)
- Integrated photonics on thin-film lithium niobate
- Monolithic Ultrahigh-Q Lithium Niobate Microring Resonator
- High-performance Coherent Optical Modulators based on Thin-film Lithium Niobate Platform
- A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform
- Photonic integration of lithium niobate micro-ring resonators onto silicon nitride waveguide chips by transfer-printing