A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory
arXiv:2309.12051 · doi:10.1109/IMW51353.2021.9439611
Abstract
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.
2021 IEEE International Memory Workshop (IMW)