paper

Transport Anisotropy in One-dimensional Graphene Superlattice in the High Kronig-Penney Potential Limit

arXiv:2309.04931 · doi:10.1103/PhysRevLett.132.056204

Abstract

One-dimensional graphene superlattice subjected to strong Kronig-Penney (KP) potential is promising for achieving electron lensing effect, while previous studies utilizing the modulated dielectric gates can only yield a moderate, spatially dispersed potential profile. Here, we realize high KP potential modulation of graphene via nanoscale ferroelectric domain gating. Graphene transistors are fabricated on PbZrTiO back-gates patterned with periodic, 100-200 nm wide stripe domains. Due to band reconstruction, the h-BN top-gating induces satellite Dirac points in samples with current along the superlattice vector , a feature absent in samples with current perpendicular to . The satellite Dirac point position scales with the superlattice period () as , with . These results can be well explained by the high KP potential scenario, with the Fermi velocity perpendicular to quenched to about 1% of that for pristine graphene. Our study presents a promising material platform for realizing electron supercollimation and investigating flat band phenomena.

12 pages, 5 figures, and Supplemental Material

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