Defect tolerance of lead-halide perovskite (100) surface relative to bulk: band bending, surface states, and characteristics of vacancies
arXiv:2309.04870 · doi:10.1021/acs.jpcc.3c06068
Abstract
We characterized the formation of vacancies at a surface slab model and contrasted the results with the bulk of lead-halide perovskites using cubic and tetragonal CsPbI as representative structures. The defect-free CsI-terminated (100) surface does not trap charge carriers. In the presence of defects (vacancies), the surface is expected to exhibit -type behavior. The formation energy of cesium vacancies is lower at the surface than in the bulk, while iodine vacancies have a similar energy (around 0.250.4 eV) within the range of chemical potentials compatible with solution processing synthesis conditions. Lead-iodine divacancies () are expected to dominate over lead-only vacancies at the surfaces. Major surface vacancies create shallow host-like energy states with a small Franck-Condon shift, making them electronically harmless (same as in bulk). The spin-orbit coupling contributes to the defect tolerance of lead-halide perovskite surfaces by causing delocalization of electronic states associated with -type defects and retraction of lowest unoccupied states from the surface due to a mixing of Pb- orbitals. These results explain a high optoelectronic performance of two-dimensional structures, nanoparticles, and polycrystalline thin films of lead-halide perovskites despite the abundance of interfaces in these materials.
41 pages (main text) + 11 pages (supporting information)
References in corpus (4)
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- Defect tolerance of lead-halide perovskite (100) surface relative to bulk: band bending, surface states, and characteristics of vacancies