Investigation of the deposition of -tantalum (110) films on a-plane sapphire substrate by molecular beam epitaxy for superconducting circuit
arXiv:2306.09566 · doi:10.1116/6.0002886
Abstract
Polycrystalline α-tantalum (110) films deposited on c-plane sapphire substrate by sputtering are used in superconducting qubits nowadays. However, these films always occasionally form other structures, such as α-tantalum (111) grains and \b{eta}-tantalum grains. To improve the film quality, we investigate the growth of α-tantalum (110) films on a-plane sapphire substrate under varying conditions by molecular beam epitaxy technology. The optimized α-tantalum (110) film is single crystal, with a smooth surface and atomically flat metal-substrate interface. The film with thickness of 30 nm shows a Tc of 4.12K and a high residual resistance ratio of 9.53. The quarter wavelength coplanar waveguide resonators fabricated with the 150 nm optimized α-tantalum (110) film, exhibits intrinsic quality factor of over one million under single photon excitation at millikelvin temperature.
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