Modeling the performance and bandwidth of single-atom adiabatic quantum memories
arXiv:2306.07855 · doi:10.1063/5.0188597
Abstract
Quantum memories are essential for quantum repeaters that will form the backbone of the future quantum internet. Such memory can capture a signal state for a controllable amount of time after which this state can be retrieved. In this work, we theoretically investigated how atomic material and engineering parameters affect the performance and bandwidth of a quantum memory. We have applied a theoretical model for quantum memory operation based on the Lindblad master equation and adiabatic quantum state manipulation. The materials properties and their uncertainty are evaluated to determine the performance of Raman-type quantum memories by showcasing two defects in two-dimensional hexagonal boron nitride (hBN). We have derived a scheme to calculate the signal bandwidth based on the material parameters as well as the maximum efficiency that can be realized. The bandwidth depends on four factors: the signal photon frequency, the dipole transition moments in the electronic structure, cavity volume, and the strength of the external control electric field. As our scheme is general and independent of materials, it can be applied to many other quantum materials with a suitable three-level structure. We therefore provided a promising route for designing and selecting materials for quantum memories. Our work is therefore an important step toward the realization of a large-scale quantum network.
14 pages, 12 figures
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- Quantum Optics Applications of Hexagonal Boron Nitride Defects
- The hBN defects database: a theoretical compilation of color centers in hexagonal boron nitride
- Advancing the hBN Defects Database through Photophysical Characterization of Bulk hBN
- Nuclear Spin-Mediated Relaxation Mechanisms of the V Center in hBN