Field-induced hybridization of moiré excitons in MoSe${}_2$/WS${}_2$ heterobilayers

Abstract

We study experimentally and theoretically the hybridization among intralayer and interlayer moiré excitons in a MoSe${}_2$/WS${}_2$ heterostructure with antiparallel alignment. Using a dual-gate device and cryogenic white light reflectance and narrow-band laser modulation spectroscopy, we subject the moiré excitons in the MoSe${}_2$/WS${}_2$ heterostack to a perpendicular electric field, monitor the field-induced dispersion and hybridization of intralayer and interlayer moiré exciton states, and induce a cross-over from type I to type II band alignment. Moreover, we employ perpendicular magnetic fields to map out the dependence of the corresponding exciton Landé $g$-factors on the electric field. Finally, we develop an effective theoretical model combining resonant and non-resonant contributions to moiré potentials to explain the observed phenomenology, and highlight the relevance of interlayer coupling for structures with close energetic band alignment as in MoSe${}_2$/WS${}_2$.

arXiv commentReplacement by the accepted manuscript version

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