Unraveling the Crystallization Kinetics of the GeSbTe Phase Change Compound with a Machine-Learned Interatomic Potential
arXiv:2304.03109 · doi:10.1038/s41524-024-01217-6
Abstract
The phase change compound GeSbTe (GST225) is exploited in advanced non-volatile electronic memories and in neuromorphic devices which both rely on a fast and reversible transition between the crystalline and amorphous phases induced by Joule heating. The crystallization kinetics of GST225 is a key functional feature for the operation of these devices. We report here on the development of a machine-learned interatomic potential for GST225 that allowed us to perform large scale molecular dynamics simulations (over 10000 atoms for over 100 ns) to uncover the details of the crystallization kinetics in a wide range of temperatures of interest for the programming of the devices. The potential is obtained by fitting with a deep neural network (NN) scheme a large quantum-mechanical database generated within Density Functional Theory. The availability of a highly efficient and yet highly accurate NN potential opens the possibility to simulate phase change materials at the length and time scales of the real devices.
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- Flexible Tuning of Asymmetric Near-field Radiative Thermal Transistor by Utilizing Distinct Phase Change Materials
- Viscosity, breakdown of Stokes-Einstein relation and dynamical heterogeneity in supercooled liquid GeSbTe from simulations with a neural network potential