Finite-Size Corrections to Defect Energetics along One-Dimensional Configuration Coordinate

Abstract

Recently, effective one-dimensional configuration coordinate diagrams have been utilized to calculate the line shapes of luminescence spectra and non-radiative carrier capture coefficients via point defects. Their calculations necessitate accurate total energies as a function of configuration coordinates. Although supercells under periodic boundary conditions are commonly employed, the spurious cell size effects have not been previously considered. In this study, we have proposed a correction energy formalism and verified its effectiveness by applying it to a nitrogen vacancy in GaN.

References in corpus (10)

• Topological Insulator Materials
• Electrostatics-based finite-size correction for first-principles point defect calculations
• First-principles theory of nonradiative carrier capture via multiphonon emission
• Self-consistent hybrid functional for condensed systems
• First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO
• Nonrad: Computing Nonradiative Capture Coefficients from First Principles
• Zn vacancy as a polaronic hole trap in ZnO
• Finite-size corrections for defect-involving vertical transitions in supercell calculations
• Anharmonic Lattice Relaxation during Non-radiative Carrier Capture
• Impact of metastable defect structures on carrier recombination in solar cells