Zn vacancy as a polaronic hole trap in ZnO

Abstract

This work explores the Zn vacancy in ZnO using hybrid density functional theory calculations. The Zn vacancy is predicted to be an exceedingly deep polaronic acceptor that can bind a localized hole on each of the four nearest-neighbor O ions. The hole localization is accompanied by a distinct outward relaxation of the O ions, which leads to lower symmetry and reduced formation energy. Notably, we find that initial symmetry-breaking is required to capture this effect, which might explain the absence of polaronic hole localization in some previous hybrid density functional studies. We present a simple model to rationalize our findings with regard to the approximately equidistant thermodynamic charge-state transition levels. Furthermore, by employing a one-dimensional configuration coordinate model with parameters obtained from the hybrid density functional theory calculations, luminescence lineshapes were calculated. The results show that the isolated Zn vacancy is unlikely to be the origin of the commonly observed luminescence in the visible part of the emission spectrum from \textit{n}-type material, but rather the luminescence in the infrared region.

arXiv comment9 pages, 4 figures

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Cited by in corpus (6)

• Energetics and electronic structure of native point defects in $\alpha$-Ga2O3
• Finite-size corrections for defect-involving vertical transitions in supercell calculations
• Zn vacancy-donor impurity complexes in ZnO
• Negative-U and polaronic behavior of the Zn-O divacancy in ZnO
• Finite-Size Corrections to Defect Energetics along One-Dimensional Configuration Coordinate
• Calculated electron paramagnetic resonance $g$-tensor and hyperfine parameters for zinc vacancy and N related defects in ZnO