Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides
arXiv:2303.15325 · doi:10.1103/PhysRevB.108.L041404
Abstract
The electron-hole exchange interaction is a fundamental mechanism that drives valley depolarization via intervalley exciton hopping in semiconductor multi-valley systems. Here, we report polarization-resolved photoluminescence spectroscopy of neutral excitons and negatively charged trions in monolayer MoSe and WSe under biaxial strain. We observe a marked enhancement(reduction) on the WSe triplet trion valley polarization with compressive(tensile) strain while the trion in MoSe is unaffected. The origin of this effect is shown to be a strain dependent tuning of the electron-hole exchange interaction. A combined analysis of the strain dependent polarization degree using ab initio calculations and rate equations shows that strain affects intervalley scattering beyond what is expected from strain dependent bandgap modulations. The results evidence how strain can be used to tune valley physics in energetically degenerate multi-valley systems.
References in corpus (23)
- Restoring the density-gradient expansion for exchange in solids and surfaces
- Generalized gradient approximation for solids and their surfaces
- Valley polarization in MoS2 monolayers by optical pumping
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Robust optical emission polarization in MoS2 monolayers through selective valley excitation
- Valley susceptibility of an interacting two-dimensional electron system
- Exciton Valley Dynamics probed by Kerr Rotation in WSe2 Monolayers
- Ultrafast Manipulation of Valley Pseudospin
- Valley Phonons and Exciton Complexes in a Monolayer Semiconductor
- Exciton-exciton interaction in transition-metal dichalcogenide monolayers
- Strain-Tuning of the Optical Properties of Semiconductor Nanomaterials by Integration onto Piezoelectric Actuators
- Strain control of hybridization between dark and localized excitons in a 2D semiconductor
- Intrinsic Donor-Bound Excitons in Ultraclean Monolayer Semiconductors
- In-situ strain tuning in hBN-encapsulated graphene electronic devices
- Relaxation and darkening of excitonic complexes in electrostatically-doped monolayer semiconductors: Roles of exciton-electron and trion-electron interactions
- Quantum Dynamics of Attractive and Repulsive Polarons in a Doped MoSe Monolayer
- Trion Species-Resolved Quantum Beats in MoSe2
- Exciton fine structure splitting and linearly polarized emission in strained transition-metal dichalcogenide monolayers
- Trions in MoS are quantum superpositions of intra- and intervalley spin states
- Light-matter coupling and non-equilibrium dynamics of exchange-split trions in monolayer WS2
- Intervalley electron-hole exchange interaction and impurity-assisted recombination of indirect excitons in WS and WSe monolayers
- A steady state approach for studying valley relaxation using optical vortex beam
- Electrostatic control of the trion fine structure in transition metal dichalcogenide monolayers
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- Engineering robust strain transmission in van der Waals heterostructure devices
- Photonics in Flatland: Challenges and Opportunities for Nanophotonics with 2D Semiconductors
- Biaxial strain tuning of exciton energy and polarization in monolayer WS2
- Quantum valley pseudospin controlled by strain
- Strain-induced exciton mobility in layered WS2 from first principles