Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4

Abstract

EuTe4 is a newly-discovered van der Waals material exhibiting a novel charge-density wave (CDW) with a large thermal hysteresis in the resistivity and CDW gap. In this work, we systematically study the electronic structure and transport properties of EuTe4 using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetoresistance measurements, and scanning tunneling microscopy (STM). We observe a CDW gap of about 200 meV at low temperatures that persists up to 400 K, suggesting that the CDW transition occurs at a much higher temperature. We observe a large thermal hysteretic behavior of the ARPES intensity near the Fermi level, consistent with the resistivity measurement. The hysteresis in the resistivity measurement does not change under a magnetic field up to 7 T, excluding the thermal magnetic hysteresis mechanism. Instead, the surface topography measured with STM shows surface domains with different CDW trimerization directions, which may be important for the thermal hysteretic behavior of EuTe4. Interestingly, we observe a large negative magnetoresistance at low temperatures that can be associated with the canting of magnetically ordered Eu spins. Our work shed light on the understanding of magnetic, transport, and electronic properties of EuTe4.

References in corpus (10)

• Fermi surface nesting and the origin of Charge Density Waves in metals
• Classification of Charge Density Waves Based on Their Nature
• ARPES Study of the Evolution of Band Structure and Charge Density Wave Properties in RTe3 for R = Y, La, Ce, Sm, Gd, Tb and Dy
• Band insulator to Mott insulator transition in 1T-TaS${}_2$
• Fermi surface nesting in several transition metal dichalcogenides
• Unconventional hysteretic transition in a charge density wave
• Revealing Charge Density Wave Formation in the LaTe_2 System by Angle Resolved Photoemission Spectroscopy
• Layered semiconductor EuTe 4 with charge density wave order in square tellurium sheets
• Charge density wave formation in $R_2$Te${}_5$ ($R$=Nd, Sm and Gd)
• Angle-resolved photoemission spectroscopy study of the charge density wave order in layered semiconductor EuTe4

Cited by in corpus (6)

• Coexistence of interacting charge density waves in a layered semiconductor
• Large moiré superstructure of stacked incommensurate charge density waves
• Enhanced thermopower in a magnetic semiconductor EuTe4 with multiple charge-density-wave instabilities/
• Bidirectional ultrafast control of charge density waves via phase competition
• Umklapp-driven first-order transition into a charge-density wave phase
• Observation of momentum dependent charge density wave gap in EuTe4