Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator

Abstract

The structural, magnetotransport, and angle-resolved photoemission spectroscopy (ARPES) of Ag-doped Bi2Se3 single crystals are presented. Temperature dependent resistivity exhibits metallic behavior with a slope change above 200 K for Ag-doped Bi2Se3. The magnetoresistance shows positive quadratic dependence at low fields satisfying Kohler's rule. Hall resistivity measurement shows that electrons are dominant charge carriers. Furthermore, these results agree well with the ARPES spectra observed at T = 20 K, where the Fermi level lies inside the bulk conduction band. The Dirac point of the topological surface states is shifted toward higher binding energy (~ 0.12 eV) for Ag-doped samples as compared to pristine Bi2Se3.

8 pages, 7 figures

References in corpus (4)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
• Linear magnetoresistance on the topological surface
• The Vertical Position of Sr Dopants in the Sr${}_x$Bi${}_2$Se${}_3$ Superconductor