Quantum-interference origin and magnitude of 1/$f$ noise in Dirac nodal line IrO${}_2$ nanowires at low temperatures

Abstract

We present 1/$f$ noise measurements of IrO${}_2$ nanowires from 1.7 to 350 K. Results reveal that the noise magnitude (represented by Hooge parameter $\gamma$) increases at low temperatures, indicating low-frequency resistance noise from universal conductance fluctuations. The cause of this noise is determined to be due to oxygen vacancies in the rutile structure of IrO${}_2$. Additionally, the number density of these mobile defects can be calculated from the $\sqrt{T}$ resistance rise caused by the orbital two-channel Kondo effect in the Dirac nodal line metal IrO${}_2$.

5 pages, 4 figures

References in corpus (3)

• Universal conductance fluctuations in indium tin oxide nanowires
• Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene
• Time-dependent universal conductance fluctuations in mesoscopic Au wires: implications