Lattice Model For The Quantum Anomalous Hall Effect in Moiré Graphene

Abstract

Inspired by experiments on magic angle twisted bilayer graphene, we present a lattice mean-field model for the quantum anomalous Hall effect in a moiré setting. Our hopping model thus provides a simple route to a moiré Chern insulator in commensurately twisted models. We present a study of our model in the ribbon geometry, in which we demonstrate the presence of thick chiral edge states that have a transverse localization that scales with the moiré lattice spacing. We also study the electronic structure of a domain wall between opposite Chern insulators. Our model and results are relevant to experiments that will image or manipulate the moiré quantum anomalous Hall edge states.

References in corpus (9)

• Lattice relaxation and energy band modulation in twisted bilayer graphenes
• Origin of band gaps in graphene on hexagonal boron nitride
• The crucial role of atomic corrugation on the flat bands and energy gaps of twisted bilayer graphene at the "magic angle" $\theta \sim 1.08^{\circ }$
• Band structure and insulating states driven by the Coulomb interaction in twisted bilayer graphene
• Moiré band model and band gaps of graphene on hexagonal boron nitride
• Moiré Commensurability and the Quantum Anomalous Hall Effect in Twisted Bilayer Graphene on Hexagonal Boron Nitride
• Ordered Loop Current States in Bilayer Graphene
• Symmetry breaking in the double moiré superlattices of relaxed twisted bilayer graphene on hexagonal boron nitride
• Moiré edge states in twisted bilayer graphene and their topological relation to quantum pumping

Cited by in corpus (2)

• Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential
• Strongly Interacting Phases in Twisted Bilayer Graphene at the Magic Angle