Rubidium Focused Ion Beam Induced Platinum Deposition

Abstract

This work presents characterization of focused ion beam induced deposition (FIBID) of platinum using both rubidium and gallium ions. Under similar beam energies, 8.5 keV for Rb${}^{+}$ and 8.0 keV for Ga${}^{+}$, and beam current near 10 pA, the two ion species deposited Pt films at similar rates. Energy-dispersive x-ray spectroscopy shows that the Rb${}^{+}$ FIBID-Pt consists of similar Pt contents with much lower primary ion contents (5% Rb and 27% Ga) than the Ga${}^{+}$ FIBID-Pt. The deposited material was also measured to have a resistivity of $8.1\times 10^4$ $\mu \mathrm{\Omega }\cdot \mathrm{cm}$ for the Rb${}^{+}$ FIBID-Pt and $5.7\times 10^3$ $\mu \mathrm{\Omega }\cdot \mathrm{cm}$ for the Ga${}^{+}$ FIBID-Pt.

5 pages, 5 figures

References in corpus (1)

• Performance predictions of a focused ion beam from a laser cooled and compressed atomic beam

Cited by in corpus (1)

• Study of Surface Damage in Silicon by Irradiation with Focused Rubidium Ions