Analogy and dissimilarity of excitons in monolayer and bilayer of MoSe
arXiv:2211.16186 · doi:10.1088/2053-1583/acbc8b
Abstract
Excitons in thin layers of semiconducting transition metal dichalcogenides are highly subject to the strongly modified Coulomb electron-hole interaction in these materials. Therefore, they do not follow the model system of a two-dimensional hydrogen atom. We investigate experimentally and theoretically excitonic properties in both the monolayer (ML) and the bilayer (BL) of MoSe encapsulated in hexagonal BN. The measured magnetic field evolutions of the reflectance contrast spectra of the MoSe ML and BL allow us to determine -factors of intralayer A and B excitons, as well as the -factor of the interlayer exciton. We explain the dependence of -factors on the number of layers and excitation state using first principles calculations. Furthermore, we demonstrate that the experimentally measured ladder of excitonic states in the ML can be reproduced using the approach with the Rytova-Keldysh potential that describes the electron-hole interaction. In contrast, the analogous calculation for the BL case requires taking into account the out-of-plane dielectric response of the MoSe BL.
10 pages, 4 figures, + SM
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- High harmonic generation in monolayer MoS2 controlled by resonant and near-resonant pulses on ultrashort time scales
- Proximity-enhanced valley Zeeman splitting at the WS/graphene interface
- Quadrupolar and Dipolar Excitons in Bilayer 2-MoSe
- Extremely high excitonic -factors in 2D crystals by alloy-induced admixing of band states
- Rydberg series of intralayer K-excitons in WSe multilayers