Hall Effect in Doped Mott-Hubbard Insulator

Abstract

We present theoretical analysis of Hall effect in doped Mott-Hubbard insulator, considered as a prototype of cuprate superconductor. We consider the standard Hubbard model within DMFT approximation. As a typical case we consider the partially filled (hole doping) lower Hubbard band. We calculate the doping dependence of both the Hall coefficient and Hall number and determine the value of carrier concentration, where Hall effect changes its sign. We obtain a significant dependence of Hall effect parameters on temperature. Disorder effects are taken into account in a qualitative way.We also perform a comparison of our theoretical results with some known experiments on doping dependence of Hall number in the normal state of YBCO and Nd-LSCO, demonstrating rather satisfactory agreement of theory and experiment. Thus the doping dependence of Hall effect parameters obtained within Hubbard model can be considered as an alternative to a popular model of the quantum critical point.

arXiv comment10 pages, 10 figures, extended paper, short communication appeared as arXiv:2203.00542

References in corpus (10)

• The numerical renormalization group method for quantum impurity systems
• Diagrammatic routes to nonlocal correlations beyond dynamical mean field theory
• Anomalous Normal-State Properties of High-T${}_c$ Superconductors -- Intrinsic Properties of Strongly Correlated Electron Systems?
• Change of carrier density at the pseudogap critical point of a cuprate superconductor
• The remarkable underlying ground states of cuprate superconductors
• Pseudogaps in Strongly Correlated Metals: A generalized dynamical mean-field theory approach
• Unusual behavior of cuprates explained by heterogeneous charge localization
• Generalized dynamical mean-field theory in physics of strongly correlated systems
• Mott-Hubbard Transition and Anderson Localization: Generalized Dynamical Mean-Field Theory Approach
• Hall effect in doped Mott insulator: DMFT-approximation

Cited by in corpus (1)

• Thermoelectric Power and Hall Effect in Correlated Metals and Doped Mott-Hubbard Insulators: DMFT approximation