Hall effect in doped Mott insulator: DMFT-approximation

Abstract

In the framework of dynamical mean field theory (DMFT) we analyze Hall effect in doped Mott insulator as a parent cuprate superconductor. We consider the partial filling (hole doping) of the lower Hubbard band and calculate the dependence of Hall coefficient and Hall number on hole doping, determining the critical concentration for sign change of the Hall coefficient. Significant temperature dependence of Hall effect is noted. A good agreement is demonstrated with concentration dependence of Hall number obtained in experiments in the normal state of YBCO.

arXiv comment4 pages, 4 figures, to be published in JETP Letters v. 115, No. 7 (2022)

References in corpus (7)

• The numerical renormalization group method for quantum impurity systems
• Anomalous Normal-State Properties of High-T${}_c$ Superconductors -- Intrinsic Properties of Strongly Correlated Electron Systems?
• Change of carrier density at the pseudogap critical point of a cuprate superconductor
• The remarkable underlying ground states of cuprate superconductors
• Pseudogaps in Strongly Correlated Metals: A generalized dynamical mean-field theory approach
• Generalized dynamical mean-field theory in physics of strongly correlated systems
• Mott-Hubbard Transition and Anderson Localization: Generalized Dynamical Mean-Field Theory Approach

Cited by in corpus (6)

• Hall map and breakdown of Fermi liquid theory in the vicinity of a Mott insulator
• Quantum Transport Theory of Strongly Correlated Matter
• Quasiparticle approach to the transport in infinite-layer nickelates
• Hall Effect in Doped Mott-Hubbard Insulator
• Hall Coefficient and Resistivity in the Doped Bilayer Hubbard Model
• Thermoelectric Power and Hall Effect in Correlated Metals and Doped Mott-Hubbard Insulators: DMFT approximation