Chirality-induced intrinsic charge rectification in a tellurium-based field-effect transistor
arXiv:2210.16154 · doi:10.1103/PhysRevB.106.L220403
Abstract
We report gate-induced enhancement of intrinsic charge rectification without p-n junctions in chiral semiconductor Te under magnetic field B. As gating shifts the chemical potential to the valence band maximum of Te, the charge rectification efficiency is enhanced hundredfold. By integrating model calculations, we attribute the charge rectification to the B-induced asymmetry of the chiral band structure. We also show that the carrier density subject to this asymmetry is augmented by a saddle-point structure near the valence band maximum, which further enhances the gate-tunable charge rectification together with its improved switchability and thermal robustness.
accepted for publication in Phys. Rev. B. 6 pages, 4 figures
References in corpus (5)
- Weyl Node and Spin Texture in Trigonal Tellurium and Selenium
- Gate-tuneable and chirality-dependent charge-to-spin conversion in Tellurium nanowires
- Current-induced Orbital and Spin Magnetizations in Crystals with Helical Structure
- Strong electrical magneto-chiral anisotropy in tellurium
- Large Second-Harmonic Generation and Linear Electro-Optic Effect in Trigonal Selenium and Tellurium