Twist-dependent intra- and interlayer excitons in moire MoSe2 homobilayers
arXiv:2210.12076 · doi:10.1103/PhysRevLett.130.026901
Abstract
Optoelectronic properties of van der Waals homostructures can be selectively engineered by the relative twist angle between layers. Here, we study the twist-dependent moire coupling in MoSe2 homobilayers. For small angles, we find a pronounced redshift of the K-K and Γ-K excitons accompanied by a transition from K-K to Γ-K emission. Both effects can be traced back to the underlying moire pattern in the MoSe2 homobilayers, as confirmed by our low-energy continuum model for different moire excitons. We identify two distinct intralayer moire excitons for R-stacking, while H-stacking yields two degenerate intralayer excitons due to inversion symmetry. In both cases, bright interlayer excitons are found at higher energies. The performed calculations are in excellent agreement with experiment and allow us to characterize the observed exciton resonances, providing insight about the layer composition and relevant stacking configuration of different moire exciton species.
References in corpus (13)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
- Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
- Evolution of Interlayer Coupling in Twisted MoS2 Bilayers
- Moiré excitons: from programmable quantum emitter arrays to spin-orbit coupled artificial lattices
- Theory of optical absorption by interlayer excitons in transition metal dichalcogenide heterobilayers
- Probing the influence of dielectric environment on excitons in monolayer WSe2: Insight from high magnetic fields
- Interlayer coupling in commensurate and incommensurate bilayer structures of transition metal dichalcogenides
- Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials
- Environmentally-Sensitive Theory of Electronic and Optical Transitions in Atomically-Thin Semiconductors
- Exciton landscape in van der Waals heterostructures
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- Theory of phonon sidebands in the absorption spectra of moiré exciton-polaritons
- Effective long-range attraction of moiré excitons under the influence of atomic reconstructions and anisotropic screening
- Emergence of non-uniform strain induced exciton species in homo- and heterobilayer transition metal dichalcogenides