Light-induced switch based on edge modes in irradiated thin topological insulators
arXiv:2210.06222 · doi:10.1088/1402-4896/acc6fc
Abstract
We investigate transport properties through nano-ribbons of thin topological insulators irradiated by high frequency light with circular polarization. By using high frequency regime, a coherent and quantized transport through the nano-ribbon is guaranteed and then Lanadauer formalism is applicable. It is demonstrated that the pseudo-spin edge modes inside the band gap can host transmission through this nano-junction which their localization on the top and bottom edges depend strongly on the light polarization. These edge modes persist even if we apply a source-drain bias. Based on this edge selectivity for the current, one can design a light-induced switch with an appropriate on/off ratio of the current which is composed of two scattering regions with opposite light polarization. The local current on each bond shows how the current is passing through the edges and jumps into the opposite edge. Furthermore, some other nano-junctions are proposed as electronic switches which are designed based on the mass term engineering of the scattering region by means of perpendicular magnetization induced by magnetic doping and also structure inversion asymmetry applied on the scattering region.
10 pages, 6 figures
References in corpus (15)
- Classification of topological insulators and superconductors in three spatial dimensions
- Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
- The electronic properties of bilayer graphene
- High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
- Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator
- Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit
- Photo-Induced Topological Phase Transition and a Single Dirac-Cone State in Silicene
- Irradiated graphene as a tunable Floquet topological insulator
- Floquet Edge States with Ultracold Atoms
- Optical Control of Topological Quantum Transport in Semiconductors
- Topological insulator Bi2Se3 thin films as an alternative channel material in MOSFETs
- Light-induced quantum anomalous Hall effect on the 2D surfaces of 3D topological insulators
- Light-induced topological phases in thin films of magnetically doped topological insulators
- Engineering of topological phases in driven thin topological insulator: Structure inversion asymmetry effect
- Effect of chiral selective tunneling on quantum transport in magnetic topological-insulator thin films