Engineering of topological phases in driven thin topological insulator: Structure inversion asymmetry effect

Abstract

We investigate the effect of a high frequency electromagnetic field with both of circularly and linearly polarization, on the emergence of quantum phases on thin topological insulators. Simultaneously, the influence of the system parameters (such as magnetic impurity, thickness engineering and structural inversion asymmetry of the potential) on emergence of topological phases is studied. We take our attention to the high frequency regime in which it is possible to consider an expansion for the Floquet Hamiltonian in terms of orders of 1/Ω. The topological invariants are determined and it is demonstrated that some phase transitions between quantum anomalous Hall insulator, quantum pseudospin Hall insulator, quantum spin Hall insulator and normal insulator can be induced by altering the aforementioned parameters of the system. To avoid heating process, tuning of the system parameters gives us the opportunity to observe these phase transitions at small intensities of light.

arXiv comment9 pages, 6 figures

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Cited by in corpus (10)

• Light-induced half-quantized Hall effect and axion insulator
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• Floquet states and optical conductivity of an irradiated two dimensional topological insulator
• Electric Circuit Simulation of Floquet Topological Insulators
• Phase transitions in intrinsic magnetic topological insulator with high-frequency pumping
• Floquet-driven indirect exchange interaction mediated by topological insulator surface states
• Modulating dichroism and optical conductivity in bilayer graphene under intense electromagnetic field irradiation
• Light-induced switch based on edge modes in irradiated thin topological insulators
• Emergent Weyl-like points in periodically modulated systems
• Floquet-Engineered Chern Insulator in two-dimensional $d_{x^2-y^2}$-Wave Altermagnets