Single Event Tolerance of X-ray SOI Pixel Sensors

Abstract

We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be $3.4_{-0.9}^{+2.9}\times 10^{-10}\mathrm{c}{\mathrm{m}}^2/bit$ and $7.3_{-3.5}^{+1.9}MeV/(mg/c{\mathrm{m}}^2)$, respectively. Using these values, the SEU rate in orbit is estimated to be $\lesssim$ 0.1 event/year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit.

9 pages, 5 figures, accepted for publication in JATIS

References in corpus (1)

• Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure

Cited by in corpus (1)

• Radiation-Induced Degradation Mechanism of X-ray SOI Pixel Sensors with Pinned Depleted Diode Structure