A novel superstructure in epitaxially grown 1T-TaTe
arXiv:2210.02010 · doi:10.1002/adma.202204579
Abstract
The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in two-dimensional materials. We report a novel charge order in few-layer thick 1T-TaTe transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized. Our photoemission and scanning probe measurements demonstrate that monolayer 1T-TaTe exhibits a variety of metastable charge density wave orders, including the superstructure, which can be selectively stabilized by controlling the post-growth annealing temperature. Moreover, we find that only the order persists in 1T-TaTe films thicker than a monolayer, up to 8 layers. Our findings identify the previously unrealized novel electronic order in a much-studied transition metal dichalcogenide and provide a viable route to control it within the epitaxial growth process.
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