10 ps timing with highly irradiated 3D trench silicon pixel sensors

Abstract

In this paper the results of a beam test characterization campaign of 3D trench silicon pixel sensors are presented. A time resolution in the order of 10 ps was measured both for non-irradiated and irradiated sensors up to a fluence of $2.5\cdot 10^{16}1MeV{n}_{eq}c{m}^{-2}$. This feature and a detection efficiency close to $99\%$ make this sensors one of the best candidates for 4D tracking detectors in High-Energy-Physics experiments.

Prepared for submission to JINST, IWORID 2022

References in corpus (1)

• Timing Optimisation and Analysis in the Design of 3D silicon sensors: the TCoDe Simulator

Cited by in corpus (4)

• Ultrafast Radiographic Imaging and Tracking: An overview of instruments, methods, data, and applications
• Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype
• Precision timing detectors
• Intrinsic timing properties of ideal 3D-trench silicon sensor with fast front-end electronics