Valley and spin splittings in a valley-layer-locked monolayer via atomic adsorption
arXiv:2209.13796 · doi:10.1103/PhysRevB.107.174410
Abstract
To date, a number of valley materials have been discovered with the spin-valley or valley-layer couplings. It is highly desirable to realize the interplay of more electronic degrees of freedom in a valley material. Based on the first-principles calculations, we demonstrate the valley and spin degeneracy liftings in the band structure of a TiSiCO monolayer, with the help of the selective expression of the layer pseudospin via atomic adsorption. The introduction of the transition-metal adatoms provides an effective electric field and magnetic proximity effect, giving rise to the valley and spin splittings. These splittings can be further tuned by applying an external electric field. According to the modified band structure, various interlayer excitons with different combinations of spins and electric dipoles are selectively created, under the optical field of appropriate frequencies. The tunable spin and valley splittings in atom adsorbed TiSiCO monolayer offer opportunities for exploring the interactions between spin, valley and layer pseudospin, and designing advanced optoelectronic devices.
arXiv comment6 pages, 4 figures
References in corpus (11)
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
- Breaking of valley degeneracy by magnetic field in monolayer MoSe2
- Electrical Tuning of Valley Magnetic Moment via Symmetry Control
- Multifunctional Antiferromagnetic Materials with Giant Piezomagnetism and Noncollinear Spin Current
- Giant and tunable valley degeneracy splitting in MoTe2
- Coupling the valley degree of freedom to antiferromagnetic order
- Two-Dimensional Oxide Topological Insulator With Iron-Pnictide Superconductor LiFeAs Structure
- Valley-Layer Coupling: A New Design Principle for Valleytronics
- Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2
- Two-dimensional Spin-Orbit Dirac Point in Monolayer HfGeTe