Ionization efficiency for nuclear recoils in silicon from $\sim 50$ eV to $3$ MeV

Abstract

We present a model for the nuclear recoil ionization efficiency in silicon based on an extension of Lindhard's theory where atomic bond disruption is modeled as a function of the initial ion energy, the interatomic potential, and the average ion-vacancy production energy. A better description of the electronic stopping than the one assumed by Lindhard, the effect of electronic straggling, as well as charge screening and Coulomb repulsion effects of ions are also considered. The model describes the available data over nearly four orders of magnitude in nuclear recoil energy.

5 pages, 3 figures

References in corpus (4)

• Measurement of the ionization produced by sub-keV silicon nuclear recoils in a CCD dark matter detector
• Germanium response to sub-keV nuclear recoils: a multipronged experimental characterization
• Direct measurement of the ionization quenching factor of nuclear recoils in germanium in the keV energy range
• Lindhard integral equation with binding energy applied to light and charge yields of nuclear recoils in noble liquid detectors

Cited by in corpus (4)

• Confirmation of the spectral excess in DAMIC at SNOLAB with skipper CCDs
• Searches for CEνNS and Physics beyond the Standard Model using Skipper-CCDs at CONNIE
• Nuclear Recoil Identification in a Scientific Charge-Coupled Device
• Molecular Dynamics Simulations on Nuclear Recoils in Silicon Crystals towards Single Electron-Hole Pair Ionization Yields