A measurement of the ionization efficiency of nuclear recoils in silicon
arXiv:1702.00873 · doi:10.1088/1748-0221/12/06/P06014
Abstract
We have measured the ionization efficiency of silicon nuclear recoils with kinetic energy between 1.8 and 20 keV. We bombarded a silicon-drift diode with a neutron beam to perform an elastic-scattering experiment. A broad-energy neutron spectrum was used and the nuclear recoil energy was reconstructed using a measurement of the time of flight and scattering angle of the scattered neutron. The overall trend of the results of this work is well described by the theory of Lindhard et al. above 4 keV of recoil energy. Below this energy, the presented data shows a deviation from the model. The data indicates a faster drop than the theory prediction at low energies.
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- First results from a search for coherent elastic neutrino-nucleus scattering (CENS) at a reactor site
- Study of the ionization efficiency for nuclear recoils in pure crystals
- First measurement of the nuclear-recoil ionization yield in silicon at 100 eV
- Nuclear-recoil energy scale in CDMS II silicon dark-matter detectors
- Naturally occurring Si and low-background silicon dark matter detectors
- First observation of isolated nuclear recoils following neutron capture for dark matter calibration
- Ionization efficiency for nuclear recoils in silicon from eV to MeV
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- Neutron capture-induced silicon nuclear recoils for dark matter and CENS
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- Molecular Dynamics Simulations on Nuclear Recoils in Silicon Crystals towards Single Electron-Hole Pair Ionization Yields